IndiumV3, Main, Repository, bibRecord, 00A485

Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

Identifieur interne : 00A485 ( Main/Repository ); précédent : 00A484; suivant : 00A486

Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

Auteurs : RBID : Pascal:04-0184229

Descripteurs français

Pascal (Inist)
- 7340S, 6835C, 7867P, 6837L, 7866F, 7866D, 7340N, Etude expérimentale, Indium alliage, Indium, Etain, Etain alliage, Cuivre, Chrome, Titane, Gallium arséniure, Semiconducteur III-V, Silicium, Semiconducteur élémentaire, Fixation pastille, Microscopie électronique transmission, Microscopie électronique balayage, Structure interface, Interface métal semiconducteur.
Wicri :
- concept : Cuivre, Chrome, Titane.

English descriptors

KwdEn :
- Chromium, Copper, Elemental semiconductors, Experimental study, Gallium arsenides, III-V semiconductors, Indium, Indium alloys, Interface structure, Scanning electron microscopy, Semiconductor-metal boundaries, Silicon, Tin, Tin alloys, Titanium, Transmission electron microscopy, Wafer bonding.

Abstract

This work reports on the interface microstructures and interface electrical and optical properties of wafer-bonded semiconductors using In/Sn and Cu/Ti as the metallic interlayers. The interface microstructures of the wafer-bonded semiconductors were characterized using transmission electron microscopy and scanning electron microscopy. The interface imperfections and their potential influences on the interface electrical performances were discussed. The interface electrical and optical characteristics of the metal-bonded wafers were also compared with those of directly fused wafers. © 2004 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Shi, Frank" uniqKey="Shi F">Frank Shi</name>
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<country xml:lang="fr">États-Unis</country>
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<wicri:cityArea>Research and Development, Micron Technology, Inc., Mail Stop 01-719, 8000 S. Federal Way, Boise</wicri:cityArea>
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<author><name sortKey="Chen, Hao" uniqKey="Chen H">Hao Chen</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Illinois</region>
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<wicri:cityArea>Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea>
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<author><name sortKey="Maclaren, Scott" uniqKey="Maclaren S">Scott Maclaren</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1>
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<wicri:cityArea>Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea>
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<publicationStmt><idno type="inist">04-0184229</idno>
<date when="2004-05-03">2004-05-03</date>
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<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>Indium alloys</term>
<term>Interface structure</term>
<term>Scanning electron microscopy</term>
<term>Semiconductor-metal boundaries</term>
<term>Silicon</term>
<term>Tin</term>
<term>Tin alloys</term>
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<front><div type="abstract" xml:lang="en">This work reports on the interface microstructures and interface electrical and optical properties of wafer-bonded semiconductors using In/Sn and Cu/Ti as the metallic interlayers. The interface microstructures of the wafer-bonded semiconductors were characterized using transmission electron microscopy and scanning electron microscopy. The interface imperfections and their potential influences on the interface electrical performances were discussed. The interface electrical and optical characteristics of the metal-bonded wafers were also compared with those of directly fused wafers. © 2004 American Institute of Physics.</div>
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<fA14 i1="02"><s1>Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1>
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<s4>INC</s4>
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<s2>PAC</s2>
<s4>INC</s4>
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<fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium alliage</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium alloys</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Etain</s0>
<s2>NC</s2>
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<fC03 i1="11" i2="3" l="ENG"><s0>Tin</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Etain alliage</s0>
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</fC03>
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<s2>NC</s2>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Chrome</s0>
<s2>NC</s2>
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<s2>NC</s2>
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<fC03 i1="15" i2="3" l="FRE"><s0>Titane</s0>
<s2>NC</s2>
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<fC03 i1="15" i2="3" l="ENG"><s0>Titanium</s0>
<s2>NC</s2>
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<s2>NK</s2>
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<s2>NC</s2>
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<fC03 i1="19" i2="3" l="FRE"><s0>Semiconducteur élémentaire</s0>
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<fC03 i1="19" i2="3" l="ENG"><s0>Elemental semiconductors</s0>
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<fC03 i1="20" i2="3" l="FRE"><s0>Fixation pastille</s0>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Wafer bonding</s0>
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<fC03 i1="21" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
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<fC03 i1="21" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
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<fC03 i1="22" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
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<fC03 i1="23" i2="3" l="FRE"><s0>Structure interface</s0>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Interface structure</s0>
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<fC03 i1="24" i2="3" l="FRE"><s0>Interface métal semiconducteur</s0>
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Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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